IndiumV3, Main, Repository, bibRecord, 00A605

Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser

Identifieur interne : 00A605 ( Main/Repository ); précédent : 00A604; suivant : 00A606

Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser

Auteurs : RBID : Pascal:04-0165722

Descripteurs français

Pascal (Inist)
- 4260B, 7847, 7866F, 8530D, 4255A, Etude théorique, Simulation ordinateur, Indium composé, Théorie laser, Modèle dispositif semiconducteur, Mode laser, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Laser semiconducteur, Analyse numérique, Lentille thermique, Spectre résolution temporelle.

English descriptors

KwdEn :
- Computerized simulation, Gallium compounds, III-V semiconductors, Indium compounds, Laser modes, Laser theory, Numerical analysis, Semiconductor device models, Semiconductor lasers, Theoretical study, Thermal lens, Time resolved spectra, Wide band gap semiconductors.

Abstract

Time-resolved measurements of the spectrum and the far field of InGaN-based laser diodes show lateral-mode changes and gradual tilting of the far field on a microsecond time scale. Numerical simulations based on a microscopic theory are in good agreement with the measurements. The observed effects are attributed to lateral carrier diffusion in combination with thermal lensing. © 2004 American Institute of Physics.

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Pascal:04-0165722

Le document en format XML

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<author><name sortKey="Eichler, Christoph" uniqKey="Eichler C">Christoph Eichler</name>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Physics, University of Neuchatel, 2000 Neuchatel, Switzerland</s1>
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<author><name sortKey="Hofstetter, Daniel" uniqKey="Hofstetter D">Daniel Hofstetter</name>
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<author><name sortKey="Chow, Weng W" uniqKey="Chow W">Weng W. Chow</name>
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<author><name sortKey="Miller, Stephan" uniqKey="Miller S">Stephan Miller</name>
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<front><div type="abstract" xml:lang="en">Time-resolved measurements of the spectrum and the far field of InGaN-based laser diodes show lateral-mode changes and gradual tilting of the far field on a microsecond time scale. Numerical simulations based on a microscopic theory are in good agreement with the measurements. The observed effects are attributed to lateral carrier diffusion in combination with thermal lensing. © 2004 American Institute of Physics.</div>
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Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser

Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

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